Symposium Q, New Functional Materials and Emerging Device Architectures for Nonvolatile Memories, held April 25 29 at the 2011 MRS Spring Meeting in San Francisco, California, was a follow up of a previous series of related symposia on nonvolatile memories at MRS annual meetings. The high attendance and large number of papers submitted indicate continuing strong international interest and research efforts in the field of emerging new nonvolatile memory materials. Main areas of research featured in this symposium were advanced flash memories, phase change memories, and resistive switching memories. In addition, ferroelectric memories, organic memories, and new emerging memories remained of interest. With international contributions from universities, research centers and industry, this volume reflects the recent advances in material science and their influence on the memory technologies addressed in this symposium.
具體描述
讀後感
評分
評分
評分
評分
用戶評價
相關圖書
本站所有內容均為互聯網搜索引擎提供的公開搜索信息，本站不存儲任何數據與內容，任何內容與數據均與本站無關，如有需要請聯繫相關搜索引擎包括但不限於百度，google,bing,sogou 等
© 2025 qciss.net All Rights Reserved. 小哈圖書下載中心 版权所有