Instabilities in Silicon Devices 在线电子书 pdf 下载 txt下载 epub 下载 mobi 下载 2024


Instabilities in Silicon Devices

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Barbottin, Gerard (EDT)/ Vapaille, Andre (EDT) 作者
Lightning Source Inc
译者
1999-2 出版日期
964 页数
$ 384.20 价格
HRD
丛书系列
9780444818010 图书编码

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发表于2024-11-10


Instabilities in Silicon Devices 在线电子书 epub 下载 mobi 下载 pdf 下载 txt 下载 2024

Instabilities in Silicon Devices 在线电子书 epub 下载 mobi 下载 pdf 下载 txt 下载 2024

Instabilities in Silicon Devices 在线电子书 pdf 下载 txt下载 epub 下载 mobi 下载 2024



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Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. "Vol.3" updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.

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