"Growth of Crystals, Volume 21" presents a survey, with detailed analysis, of the scientific and technological approaches, and results obtained, by leading Russian crystal growth specialists from the late 1990's to date. The volume contains 16 reviewed chapters on various aspects of crystal and crystalline film growth from various phases (vapour, solution, liquid and solid). Both fundamental aspects, e.g. growth kinetics and mechanisms, and applied aspects, e.g. preparation of technically important materials in single-crystalline forms, are covered. A large portion of the volume is devoted to film growth, including film growth from eutectic melt, from amorphous solid state, kinetics of lateral epitaxy and film growth on specially structured substrates. An important chapter in this section covers heteroepitaxy of non-isovalent A3B5 semiconductor compounds, which have important applications in the field of photonics. The volume also includes a detailed analysis of the structural aspects of a broad range of laser crystals, information that is invaluable for successfully growing perfect, laser-effective, single crystals.
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