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Ion Implantation and Synthesis of Materials 在线电子书 pdf 下载 txt下载 epub 下载 mobi 下载 2024

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Nastasi, M. 作者

Springer Verlag

译者

出版日期

277 页数

$ 168.37 价格

HRD

丛书系列

9783540236740 图书编码

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发表于2024-12-24

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Ion Implantation and Synthesis of Materials 在线电子书 epub 下载 mobi 下载 pdf 下载 txt 下载 2024

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Ion Implantation and Synthesis of Materials 在线电子书 pdf 下载 txt下载 epub 下载 mobi 在线电子书下载

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Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

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