Cryogenic Operation of Silicon Power Devices 在线电子书 pdf 下载 txt下载 epub 下载 mobi 下载 2024

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Singh, Ranbir/ Baliga, B. Jayant 作者

译者

1998-5 出版日期

166 页数

$ 211.31 价格

丛书系列

9780792381570 图书编码

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Cryogenic Operation of Silicon Power Devices 在线电子书 epub 下载 mobi 下载 pdf 下载 txt 下载 2024

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Cryogenic Operation of Silicon Power Devices 在线电子书 pdf 下载 txt下载 epub 下载 mobi 在线电子书下载

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This is the first comprehensive resource of power device electrical characteristics in a cryogenic environment. Using theoretical and experimental knowledge from the literature, temperature dependence of fundamental silicon material parameters like intrinsic carrier concentration, carrier mobilities, lifetimes and bandgap narrowing was identified. The temperature dependent model of avalanche breakdown was developed using experimental data on numerous devices. A wide range of power devices, each with its own unique features, was chosen for theoretical and experimental analysis. Using these analyses, Schottky diodes, power MOSFETs, power BJTs, and power JFETs were optimized in the 300-77K temperature range. Cryogenic Operation of Silicon Power Devices presents the different characteristics of power devices operated below -55 C (220K). It provides data and physics based models for power devices operated at temperatures down to 77K for the first time within a single source. All commercially available devices have been included to provide comprehensive coverage. Also, a fundamental analysis of devices identifies the suitability of various devices to applications requiring cryogenic operations. A quantitative analysis of the relative strengths and weaknesses of these devices is also presented.

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